Part Number Hot Search : 
100TS60S 2SK1342 XF5006T7 SD630CT SZ6056 YTZ420 P4SMA33A 3225X
Product Description
Full Text Search

5962R-TBD01VTBDA - 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).

5962R-TBD01VTBDA_8280416.PDF Datasheet

 
Part No. 5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX 5962R-TBD01QTBDC 5962R-TBD01QTBDX 5962R-TBD01QTBDA
Description 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).

File Size 93.50K  /  14 Page  

Maker


Aeroflex Circuit Technology



Homepage http://www.aeroflex.com/
Download [ ]
[ 5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX 5962R-TBD01QTBDC 5962R-TBD01QTBDX 5962R-TBD01QTBD Datasheet PDF Downlaod from Datasheet.HK ]
[5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX 5962R-TBD01QTBDC 5962R-TBD01QTBDX 5962R-TBD01QTBD Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 5962R-TBD01VTBDA ]

[ Price & Availability of 5962R-TBD01VTBDA by FindChips.com ]

 Full text search : 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).


 Related Part Number
PART Description Maker
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
Aeroflex Circuit Technology
AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF 3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存)
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
   3.3V 256K × 16/18 pipeline burst synchronous SRAM
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 256K X 8 STANDARD SRAM, 12 ns, PDSO44
256K X 8 STANDARD SRAM, 10 ns, PDSO44
TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM
256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM
TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36
TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
ETC
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
AS7C33256P AS7C33256PFD18B AS7C33256PFD18BV.1.2 AS 3.3V 256K x 18 pipeline burst synchronous SRAM 256K X 18 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 256K 】 18 pipeline burst synchronous SRAM
Sync SRAM - 3.3V
From old datasheet system
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
CY7C1354DV25-200BZI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture 256K X 36 ZBT SRAM, 3.2 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1352-133AC CY7C1352-80AC 256K x18 Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 7 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1328G-133AXI 4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
Cypress Semiconductor, Corp.
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
Electronic Theatre Controls, Inc.
White Electronic Designs
GS88037BGT-250V GS88037BT-250IV GS88037BT-250V GS8 256K x 36 9Mb Sync Burst SRAM 256K X 36 CACHE SRAM, 2.5 ns, PQFP100
GSI Technology, Inc.
GSI[GSI Technology]
WPS512K8C-20RJMB WPS512K8LB-15RJMB WPS512K8LB-25RJ 512K x 8 SRAM, 20ns
512K x 8 SRAM, low power, 15ns
512K x 8 SRAM, low power, 25ns
512K x 8 SRAM, 15ns
512K x 8 SRAM, 25ns
White Electronic Designs
 
 Related keyword From Full Text Search System
5962R-TBD01VTBDA Instrument 5962R-TBD01VTBDA enhancement 5962R-TBD01VTBDA capacitors 5962R-TBD01VTBDA Serie 5962R-TBD01VTBDA Pin
5962R-TBD01VTBDA epitaxial 5962R-TBD01VTBDA amplifier 5962R-TBD01VTBDA filetype:pdf 5962R-TBD01VTBDA Output 5962R-TBD01VTBDA series
 

 

Price & Availability of 5962R-TBD01VTBDA

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.0137801170349